KFM1216Q2A-DEB5 Datasheet - Samsung Electronics

KFM1216Q2A-DEB5 FLASH MEMORY

with a new format Draft Date Nov. 17, 2004 Dec. 24, 2004 Remark Draft Preliminary 0.2 0.3 Jan. 10, 2005 Preliminary Preliminary 1. Corrected the errata Jan. 13, 2005 2. Revised typical value of ISB from 50uA to 10uA 3. Revised maximum value of ISB from 100uA to 50uA 4. Revised maximum value of.

MuxOneNAND512(KFM1216Q2A-DEB5) FLASH MEMORY www.DataSheet4U.com MuxOneNANDTM Specification Density 512Mb Part No. KFM1216Q2A-DEB5 VCC(core & IO) 1.8V(1.7V~1.95V) Temperature Extended PKG 63FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) FLASH MEMORY www.DataSheet4U.com 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Company MuxOneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revi.

KFM1216Q2A-DEB5 Features

* including:

* A BootRAM and bootloader

* Two independent bi-directional 2KB DataRAM buffers

* A High-Speed x16 Host Interface

* On-chip Error Correction

* On-chip NOR interface controller This on-chip integration enables system designers to reduce external syst

KFM1216Q2A-DEB5_SamsungElectronics.pdf