KFM1G16Q2M-DEB5 Datasheet - Samsung semiconductor

KFM1G16Q2M-DEB5 FLASH MEMORY

is revised. 4. Added Read while Load and Write While Program diagram. 5. Revised and added OTP description. 6. Added Write Protection description 7. Added Multi Block Erase operation notes 8. Added NAND Array Memory Map 9. RDY Conf bit in System Configuration Register is added. 10. Controller Status.

MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density 1Gb 2Gb www.DataSheet4U.net Part No. KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5 VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Temperature Extended Extended PKG 63FBGA(LF) 63FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Comp.

KFM1G16Q2M-DEB5 Features

* including:

* A BootRAM and bootloader

* Two independent bi-directional 2KB DataRAM buffers

* A High-Speed x16 Host Interface

* On-chip Error Correction

* On-chip NOR interface controller This on-chip integration enables system designers to reduce external syst

KFM1G16Q2M-DEB5_Samsungsemiconductor.pdf