K4Q153211M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram

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Samsung Semiconductor

Datasheet Details

Part number	K4Q153211M
Manufacturer	Samsung Semiconductor
File Size	370.34 KB
Description	(K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram
Datasheet	K4Q153211M Datasheet
Note	This datasheet PDF includes multiple part numbers: K4Q153211M, K4Q153212M. Please refer to the document for exact specifications by model.
Additional preview pages of the K4Q153211M datasheet.

Product details

Description

CMOS DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM.Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60), power consumption(Normal or Low power) and SOJ package type are optional

Features

of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Other Datasheets by Samsung Semiconductor

K4Q153212M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram
K4Q153212M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram
K4Q153212M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram
K4Q153212M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram
K4Q153212M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram
K4Q153212M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram

Published: Sep 29, 2007 |