K4Q153211M, K4Q153212M Datasheet - Samsung Semiconductor

K4Q153211M (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram

CMOS DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60), power consumption(Normal or Lo.

K4Q153211M Features

* of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low powe

K4Q153212M_SamsungSemiconductor.pdf