K4Q153212M

(K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram

Samsung Semiconductor

K4Q153212M Features

* of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low powe

K4Q153212M General Description

CMOS DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60), power consumption(Normal or Lo.

K4Q153212M Datasheet (370.34 KB)

K4Q153212M Datasheet Preview — Preview of K4Q153212M PDF

Datasheet Details

Part number:

K4Q153212M

Manufacturer:

Samsung Semiconductor

File Size:

370.34 KB

Description:

(k4q153211m / k4q153212m) 512kx32bit cmos quad casdram.

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K4Q153212M K4Q153211M K4Q153212M 512kx32bit CMOS Quad Casdram Samsung Semiconductor

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K4Q153212M Features

K4Q153212M General Description

Datasheet Details

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