KEF00C00CM-EG00

Flash Memory

Samsung Semiconductor

KEF00C00CM-EG00 Features

* Design Technology: 0.25µm www.datasheet4u.com

* Voltage Supply - Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) - Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V)

* Organization - Host Interface:16bit

* Internal BufferRAM -

KEF00C00CM-EG00 General Description

FLASH MEMORY OneNANDTM (MCP of NAND Flash Interface chip and NAND Flash) allows standard NAND Flash chips to interface with OneNANDTM bus without performance penalty. This device is 1.8V/2.6V operation and comprised of about 10,000 gates and 4KB internal Bufferwww.datasheet4u.com RAM. This 4KB Buf.

KEF00C00CM-EG00 Datasheet (331.96 KB)

KEF00C00CM-EG00 Datasheet Preview — Preview of KEF00C00CM-EG00 PDF

Datasheet Details

Part number:

KEF00C00CM-EG00

Manufacturer:

Samsung Semiconductor

File Size:

331.96 KB

Description:

Flash memory.
OneNANDTM256 / OneNANDTM512 FLASH MEMORY www.datasheet4u.com OneNANDTMMCP SPECIFICATION NAND Density 256Mb NAND T.B.D KEF00F0000CM-EG00 KEF00F0000C.

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TAGS

KEF00C00CM-EG00 Flash Memory Samsung Semiconductor

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