KEF00F0000CM

Flash Memory

Samsung Semiconductor

KEF00F0000CM Features

* Design Technology: 0.25µm www.datasheet4u.com

* Voltage Supply - Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) - Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V)

* Organization - Host Interface:16bit

* Internal BufferRAM -

KEF00F0000CM General Description

FLASH MEMORY OneNANDTM (MCP of NAND Flash Interface chip and NAND Flash) allows standard NAND Flash chips to interface with OneNANDTM bus without performance penalty. This device is 1.8V/2.6V operation and comprised of about 10,000 gates and 4KB internal Bufferwww.datasheet4u.com RAM. This 4KB Buf.

KEF00F0000CM Datasheet (331.96 KB)

KEF00F0000CM Datasheet Preview — Preview of KEF00F0000CM PDF

Datasheet Details

Part number:

KEF00F0000CM

Manufacturer:

Samsung Semiconductor

File Size:

331.96 KB

Description:

Flash memory.
OneNANDTM256 / OneNANDTM512 FLASH MEMORY www.datasheet4u.com OneNANDTMMCP SPECIFICATION NAND Density 256Mb NAND T.B.D KEF00F0000CM-EG00 KEF00F0000C.

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TAGS

KEF00F0000CM Flash Memory Samsung Semiconductor

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