KMM366S823DTF Datasheet - Samsung Semiconductor

KMM366S823DTF Unbuffered DIMM

The Samsung KMM366S823DTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S823DTF consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF dec.

www.DataSheet4U.com KMM366S823DTF Revision History Revision 0.0(July 7, 1999) PC66 Unbuffered DIMM Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE. Symbol Change Notice IIL IIL IOL Before Input leakage current (inputs) Inpu.

KMM366S823DTF Features

* hs 5.5 4.0 3.0 2.0 Unit Inches Inches Inches Inches REV. 0.0 July 1999 DataSheet4U.com DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com KMM366S823DTF DC CHARACTERISTICS Parameter (Recommended operating condition unless otherwise n

KMM366S823DTF_SamsungSemiconductor.pdf