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M53230810CW0 Datasheet (m532308x0cb0/cw0) Dram Module

Manufacturer: Samsung Semiconductor

Overview: www.DataSheet4U.com DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh,.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module.

The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Key Features

  • Part Identification - M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold).
  • Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and Hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.

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