IRF132 Datasheet, Mosfet, Samsung semiconductor

PDF File Details

Part number:

IRF132

Manufacturer:

Samsung semiconductor

File Size:

211.73kb

Download:

📄 Datasheet

Description:

N-channel power mosfet.

TAGS

IRF132

Samsung semiconductor

📁 Related Datasheet

IRF130 - N-Channel Power MOSFET (Samsung semiconductor)
.

IRF130 - N-Channel Power MOSFET (Seme LAB)
IRF130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET V.

IRF130 - N-Channel Power MOSFET (Intersil Corporation)
IRF130 Data Sheet March 1999 File Number 1566.4 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF130 - N-Channel Power MOSFET (International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF130 100V RDS(on) ID 0.18 1.

IRF130 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF130 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF130 DESCRIPTION ·Drain Current ID=14A@ TC=25℃ ·Drain Source Volt.

IRF1302 - Power MOSFET (International Rectifier)
PD - 94591 AUTOMOTIVE MOSFET IRF1302 HEXFET® Power MOSFET D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt.

IRF1302L - Power MOSFET (International Rectifier)
PD - 94520 AUTOMOTIVE MOSFET Benefits ● ● ● ● ● ● IRF1302S IRF1302L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dyna.

IRF1302S - Power MOSFET (International Rectifier)
PD - 94520 AUTOMOTIVE MOSFET Benefits ● ● ● ● ● ● IRF1302S IRF1302L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dyna.

IRF130SMD - N-Channel Power MOSFET (Seme LAB)
IRF130SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1.