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IRF1324 - N-Channel MOSFET

IRF1324 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1324，IIRF1324 *.

IRF1324 Features

* Static drain-source on-resistance: RDS(on) ≤1.5mΩ
* Enhancement mode:
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF1324 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 24 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1412 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage

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Datasheet Details

Part number
IRF1324
Manufacturer
INCHANGE
File Size
241.70 KB
Datasheet
IRF1324-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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