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IRF1310NL - N-Channel MOSFET

Datasheet Summary

Features

  • With To-262 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRF1310NL

Datasheet Details

Part number IRF1310NL
Manufacturer INCHANGE
File Size 251.96 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF1310NL Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 42 30 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 160 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.95 ℃/W IRF1310NL isc website：www.iscsemi.
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