IRF1310N Datasheet - International Rectifier

IRF1310N Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF1310N Features

* N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB EM XP AL ME P :L ETH : IS TH IS A IS N F IR EXA N AIR 1 0F1 1 00 1 0 W ITA H AE SM SB EL MY BLY W ITH SS LO TO D CE OD 9B1M LOT C 9E B 1M A A INR TE RT NIO A TIO NAL IN TE NA N AL RTIFIE E C TIF R EC R IE R 10 1 0 IR F IR 1 0

IRF1310N_InternationalRectifier.pdf