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IRF1310N - Power MOSFET

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB EM XP AL ME P :L ETH : IS TH IS A IS N F IR EXA N AIR 1 0F1 1 00 1 0 W ITA H AE SM SB EL MY BLY W ITH SS LO TO D CE OD 9B1M LOT C 9E B 1M A A INR TE RT NIO A TIO NAL IN TE NA N AL RTIFIE E C TIF R EC R IE R 10 1 0 IR F IR 1 0F 10 LO G O LOG 9 2 49 62 4 6 9B 9B1 M 1 M AE SM SB EL MY BLY ASS LOT CE O DE L OT COD PT AR NB UE MR BER PAR NTU M D A TE CE ODE D A TE COD (Y Y(Y WY WW )W) YR EAR YY Y =Y Y= EA W W = EEK W W = W E.

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Full PDF Text Transcription

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PD - 91504A IRF1310N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.036Ω ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
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