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IRF1310N

Power MOSFET

IRF1310N Features

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IRF1310N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF1310N Datasheet (96.76 KB)

Preview of IRF1310N PDF

Datasheet Details

Part number:

IRF1310N

Manufacturer:

International Rectifier

File Size:

96.76 KB

Description:

Power mosfet.
PD - 91504A IRF1310N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Full.

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TAGS

IRF1310N Power MOSFET International Rectifier

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