IRF1310N Datasheet, Mosfet, International Rectifier

IRF1310N Features

• Mosfet Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V
• D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Cur

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Part number:

IRF1310N

Manufacturer:

International Rectifier

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96.76kb

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📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p

IRF1310N Application

• Applications The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50

TAGS

IRF1310N

International Rectifier

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