IRF1310S

Power MOSFET

International Rectifier

IRF1310S General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de.

IRF1310S Datasheet (361.90 KB)

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IRF1310S

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International Rectifier

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361.90 KB

Description:

Power mosfet.
Previous Datasheet Index Next Data Sheet PD - 9.1221 IRF1310S HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mou.

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IRF1310S Power MOSFET International Rectifier

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IRF1310S General Description

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