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IRF100B202 N-Channel MOSFET

IRF100B202 Description

isc N-Channel MOSFET Transistor IRF100B202，IIRF100B202 *.

IRF100B202 Features

* Static drain-source on-resistance: RDS(on) ≤8.6mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF100B202 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 97 IDM Drain Current-Single Pulsed 380 PD Total Dissipation @TC=25℃ 221 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRF100B202
Manufacturer
INCHANGE
File Size
241.14 KB
Datasheet
IRF100B202-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF100B202-like datasheet