IRF100B202 Datasheet - INCHANGE

IRF100B202, N-Channel MOSFET

isc N-Channel MOSFET Transistor IRF100B202，IIRF100B202 *

Features

* Static drain-source on-resistance: RDS(on) ≤8.6mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 97 IDM Drain Current-Single Pulsed 380 PD Total Dissipation @TC=25℃ 221 Tj Max.
Operating Junction Temperature 175 Tstg Storage T

IRF100B202-INCHANGE.pdf