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IRF1010E - N-Channel MOSFET

IRF1010E Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E， IIRF1010E *.

IRF1010E Features

* Static drain-source on-resistance: RDS(on) ≤12mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF1010E Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 84 IDM Drain Current-Single Pulsed 330 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRF1010E
Manufacturer
INCHANGE
File Size
241.34 KB
Datasheet
IRF1010E-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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