IRF1010E Datasheet - INCHANGE

N-Channel MOSFET

* Static drain-source on-resistance: RDS(on) ≤12mΩ

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* reliable device for use in a wide variety of applications

Rating: 1 ★ (3 votes)

IRF1010E

INCHANGE

241.34 KB

N-channel mosfet.

📁 Related Datasheet

IRF1010 N-Channel Power MOSFET (nELL)

IRF1010E Power MOSFET (International Rectifier)

IRF1010EL Power MOSFET (International Rectifier)

IRF1010ELPbF HEXFET Power MOSFET (International Rectifier)

IRF1010EPBF Power MOSFET (International Rectifier)

IRF1010ES Power MOSFET (International Rectifier)

IRF1010ES N-Channel MOSFET (INCHANGE)

IRF1010ESPbF HEXFET Power MOSFET (International Rectifier)

IRF1010EZ N-Channel MOSFET (INCHANGE)

IRF1010EZ AUTOMOTIVE MOSFET (International Rectifier)

Stock and price

Infineon Technologies AG

IRF1010EPBF

336 In Stock

Qty : 10000 units

Unit Price : $0.83

🛒 Buy Now

TAGS

IRF1010E N-Channel MOSFET INCHANGE

Image Gallery