Datasheet Details
- Part number
- IRF1010E
- Manufacturer
- INCHANGE
- File Size
- 241.34 KB
- Datasheet
- IRF1010E-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRF1010E Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E, IIRF1010E *.
IRF1010E Features
* Static drain-source on-resistance:
RDS(on) ≤12mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRF1010E Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
84
IDM
Drain Current-Single Pulsed
330
PD
Total Dissipation @TC=25℃
200
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Te
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