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IRF1310N - N-Channel MOSFET

IRF1310N Description

isc N-Channel MOSFET Transistor IRF1310N，IIRF1310N *.

IRF1310N Features

* Static drain-source on-resistance: RDS(on) ≤0.036Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF1310N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 42 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 160 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRF1310N
Manufacturer
INCHANGE
File Size
240.92 KB
Datasheet
IRF1310N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF1310N-like datasheet