Datasheet Details
- Part number
- IRF1310N
- Manufacturer
- INCHANGE
- File Size
- 240.92 KB
- Datasheet
- IRF1310N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRF1310N Description
isc N-Channel MOSFET Transistor IRF1310N,IIRF1310N *.
IRF1310N Features
* Static drain-source on-resistance:
RDS(on) ≤0.036Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRF1310N Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
42
IDM
Drain Current-Single Pulsed
140
PD
Total Dissipation @TC=25℃
160
Tj
Max. Operating Junction Temperature
175
Tstg
Storage T
📁 Related Datasheet
📌 All Tags