The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4S513233F-MEL Features
* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle
K4S513233F_Samsungsemiconductor.pdf
Datasheet Details
K4S513233F-MEL, K4S513233F
Samsung semiconductor
172.18 KB
Mobile sdram.
This datasheet PDF includes multiple part numbers: K4S513233F-MEL, K4S513233F.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
