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K4S513233F-MEL, K4S513233F - Mobile SDRAM

K4S513233F-MEL Description

K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high.

K4S513233F-MEL Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

K4S513233F-MEL Applications

* ORDERING INFORMATION Part No. K4S513233F-M(E)C/L/F75 K4S513233F-M(E)C/L/F1H K4S513233F-M(E)C/L/F1L Max Freq. 133MHz(CL=3), 111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package - M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4S513233F-MEL, K4S513233F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S513233F-MEL, K4S513233F
Manufacturer
Samsung semiconductor
File Size
172.18 KB
Datasheet
K4S513233F_Samsungsemiconductor.pdf
Description
Mobile SDRAM
Note
This datasheet PDF includes multiple part numbers: K4S513233F-MEL, K4S513233F.
Please refer to the document for exact specifications by model.

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Mobile SDRAM Samsung semiconductor
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