K4S513233F-ML - Mobile SDRAM

This page provides the datasheet information for the K4S513233F-ML, a member of the K4S513233F Mobile SDRAM family.

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S513233F-ML
Manufacturer	Samsung semiconductor
File Size	172.18 KB
Description	Mobile SDRAM
Datasheet	K4S513233F-ML Datasheet
Additional preview pages of the K4S513233F-ML datasheet.

K4S513233F-ML Product details

Description

The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S513233F-MC - Mobile SDRAM
K4S513233F-MEC - Mobile SDRAM
K4S513233F-MEF - Mobile SDRAM
K4S513233F-MEL - Mobile SDRAM
K4S513233F-MF - Mobile SDRAM
K4S51323LF-MC - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEC - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEF - 4M x 32Bit x 4 Banks Mobile SDRAM

Published: Apr 12, 2010 |