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K4T1G084QA-ZCE6, K4T1G164QA 1Gb A-die DDR2 SDRAM Specification

K4T1G084QA-ZCE6 Description

1G A-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PRO.
2.

K4T1G084QA-ZCE6 Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MH

K4T1G084QA-ZCE6 Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4T1G084QA-ZCE6, K4T1G164QA. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4T1G084QA-ZCE6, K4T1G164QA
Manufacturer
Samsung semiconductor
File Size
654.56 KB
Datasheet
K4T1G164QA_Samsungsemiconductor.pdf
Description
1Gb A-die DDR2 SDRAM Specification
Note
This datasheet PDF includes multiple part numbers: K4T1G084QA-ZCE6, K4T1G164QA.
Please refer to the document for exact specifications by model.

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1Gb A-die DDR2 SDRAM Specification Samsung semiconductor
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