K4T1G084QA-ZCE6, K4T1G164QA - 1Gb A-die DDR2 SDRAM Specification

Samsung semiconductor

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K4T1G084QA-ZCE6 Datasheet Preview — This datasheet PDF includes multiple part numbers: K4T1G084QA-ZCE6, K4T1G164QA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	K4T1G084QA-ZCE6, K4T1G164QA
Manufacturer	Samsung semiconductor
File Size	654.56 KB
Description	1Gb A-die DDR2 SDRAM Specification
Datasheet	K4T1G164QA_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4T1G084QA-ZCE6, K4T1G164QA. Please refer to the document for exact specifications by model.

K4T1G084QA-ZCE6 Product details

Description

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 28 Rev.1.1 Aug.2005 1G A-die DDR2 SDRAM Ordering Information Organization 256Mx4 128Mx8 64Mx16 DDR2-667 5-5-5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE6 K4T1G164QA-ZCE6 DDR2-533 4-4-4 K4T1G044QA-ZCD5 K4T1G084QA-ZCD5 K4T1G164QA-ZCD5 www.DataSheet4U.com DDR2 SDRAM Package 68 FBGA 68 FBGA 84 FBGA DDR2-400 3-3-3 K4T1G044QA-ZCCC K4T1G084QA-ZCCC K4T1G164QA-ZCCC Note 1 : Speed bin is in order of CL-tRCD

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin.
8 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Rea.

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Other Datasheets by Samsung semiconductor

K4T1G084QC - (K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification
K4T1G084QD - (K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification
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Published: Apr 22, 2010 |