K4T1G044QA Datasheet - Samsung semiconductor

K4T1G044QA 1Gb A-die DDR2 SDRAM Specification

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 28 Rev. 1.1 Aug. 2005 1G A-die DDR2 SDRAM Ordering Information Organization 256Mx4 128Mx8 64Mx16 DDR2-667 5-5-5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE6 K4T1G164QA-ZCE6 DDR2-533 4-4-4 K4T1G044QA-ZCD5 K4T.

1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification www.DataSheet4U.com Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR.

K4T1G044QA Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns

* JEDEC standard 1.8V ± 0.1V Power Supply

* VDDQ = 1.8V ± 0.1V

* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MH

K4T1G044QA_Samsungsemiconductor.pdf