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K4T1G044QA 1Gb A-die DDR2 SDRAM Specification

K4T1G044QA Description

1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification www.DataSheet4U.com Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROV.
2.

K4T1G044QA Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MH

K4T1G044QA Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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Datasheet Details

Part number
K4T1G044QA
Manufacturer
Samsung semiconductor
File Size
665.07 KB
Datasheet
K4T1G044QA_Samsungsemiconductor.pdf
Description
1Gb A-die DDR2 SDRAM Specification

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