K4T1G044QA Datasheet - Samsung semiconductor

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K4T1G044QA 1Gb A-die DDR2 SDRAM Specification

1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification www.DataSheet4U.com Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROV.
2.

K4T1G044QA_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4T1G044QA

Manufacturer:

Samsung semiconductor

File Size:

665.07 KB

Description:

1Gb A-die DDR2 SDRAM Specification

Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MH

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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K4T1G044QA 1Gb A-die DDR2 SDRAM Specification Samsung semiconductor

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