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K4T1G044QM 1Gb M-die DDR2 SDRAM Specification

K4T1G044QM Description

1Gb M-die DDR2 SDRAM DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.1 January 2005 Page 1 of 29 Rev.1.1 Jan.2005 1Gb M-die DDR2 SDRAM .
2.

K4T1G044QM Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
* 8 Banks
* Post

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Datasheet Details

Part number
K4T1G044QM
Manufacturer
Samsung
File Size
457.24 KB
Datasheet
K4T1G044QM_Samsung.pdf
Description
1Gb M-die DDR2 SDRAM Specification

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