K4T1G044QM Datasheet (Samsung) - 1Gb M-die DDR2 SDRAM Specification

K4T1G044QM, 1Gb M-die DDR2 SDRAM Specification

2.3 Addressing 3.

Absolute Maximum Rating 4.

AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.1.1 Jan.

2005 1Gb M-die DDR2 SDRAM 0.

Ordering Information Organization 256Mx4 128Mx8 64Mx16 DDR2-533 4-4-4 K4T1G044QM-ZCD5 K4T1G084QM-ZCD5 K4T1G164QM-ZCD5 DDR2-400 3-3-3 K4T1G044QM-ZCCC

K4T1G044QM Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns

* JEDEC standard 1.8V ± 0.1V Power Supply

* VDDQ = 1.8V ± 0.1V

* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.

* 8 Banks

* Post