K4T1G044QM - 1Gb M-die DDR2 SDRAM Specification

Samsung

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Datasheet Details

Part number	K4T1G044QM
Manufacturer	Samsung
File Size	457.24 KB
Description	1Gb M-die DDR2 SDRAM Specification
Datasheet	K4T1G044QM_Samsung.pdf

K4T1G044QM Product details

Description

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.1.1 Jan.2005 1Gb M-die DDR2 SDRAM 0. Ordering Information Organization 256Mx4 128Mx8 64Mx16 DDR2-533 4-4-4 K4T1G044QM-ZCD5 K4T1G084QM-ZCD5 K4T1G164QM-ZCD5 DDR2-400 3-3-3 K4T1G044QM-ZCCC K4T1G084QM-ZCCC K4T1G164QM-ZCCC DDR2 SDRAM Package Lead-Free Lead-Free Lead-Free Note : Speed bin is in order of CL-tRCD-tRP 1.Key

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
8 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read Latency(RL) -1.
Burst Length: 4 , 8(Interleav.

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Published: Aug 15, 2005 |