K4X1G323PC-LE - 32Mx32 Mobile DDR SDRAM
(Samsung semiconductor)
K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X1G323PC-FE - 32Mx32 Mobile DDR SDRAM
(Samsung semiconductor)
K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X1G323PC-FG - 32Mx32 Mobile DDR SDRAM
(Samsung semiconductor)
K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X1G163PC-FE - Mobile DDR SDRAM
(Samsung semiconductor)
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X1G163PC-FG - Mobile DDR SDRAM
(Samsung semiconductor)
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .
K4X1G163PC-LE - Mobile DDR SDRAM
(Samsung semiconductor)
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • .