K6E0808C1C-20 Datasheet (Samsung semiconductor) - 32Kx8 Bit High Speed CMOS Static RAM

K6E0808C1C-20, 32Kx8 Bit High Speed CMOS Static RAM

The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

The device is fabricated using SAMSUNG′s advanced

PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.

CMOS SRAM Revision History Rev No.

Rev.

0.0 Rev.

1.0 History Initial release with Preliminary.

Release to final Data Sheet.

Delete Preliminary Update A.C parameters 2.1.

Updated A.C parameters Previous spec.

Updated spec.

(12/15/20ns part) (12/15/20ns part) tOE - / 8/10ns - / 7 /9 ns tCW - /12/ - ns - /11/ - ns tHZ 8/10/10ns 6/ 7/10ns tOHZ - / 8 / - ns - / 7 / - ns tDW - / 9 / - ns -

K6E0808C1C-20 Features

* Fast Access Time 12, 15, 20ns(Max.)

* Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.) Operating K6E0808C1C-12 : 165mA(Max.) K6E0808C1C-15 : 150mA(Max.) K6E0808C1C-20 : 140mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatible Inputs and Outputs