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K6E0808C1E

32K x 8 Bit High-Speed CMOS Static RAM

K6E0808C1E Features

* Fast Access Time 10, 12, 15ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatib

K6E0808C1E General Description

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced.

K6E0808C1E Datasheet (181.62 KB)

Preview of K6E0808C1E PDF

Datasheet Details

Part number:

K6E0808C1E

Manufacturer:

Samsung semiconductor

File Size:

181.62 KB

Description:

32k x 8 bit high-speed cmos static ram.
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperatur.

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TAGS

K6E0808C1E 32K Bit High-Speed CMOS Static RAM Samsung semiconductor

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