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K6E0808C1E-C10

32K x 8 Bit High-Speed CMOS Static RAM

K6E0808C1E-C10 Features

* Fast Access Time 10, 12, 15ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatib

K6E0808C1E-C10 General Description

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced.

K6E0808C1E-C10 Datasheet (181.62 KB)

Preview of K6E0808C1E-C10 PDF

Datasheet Details

Part number:

K6E0808C1E-C10

Manufacturer:

Samsung semiconductor

File Size:

181.62 KB

Description:

32k x 8 bit high-speed cmos static ram.
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperatur.

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K6E0808C1E-C10 32K Bit High-Speed CMOS Static RAM Samsung semiconductor

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