K6E0808C1E-I10 - 32K x 8 Bit High-Speed CMOS Static RAM

Samsung semiconductor

K6E0808C1E-I10 Description

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating).Operated at Commercial and Industrial Temperatur.
The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

K6E0808C1E-I10 Features

* Fast Access Time 10, 12, 15ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 2mA(Max. ) 0.6mA(Max. ) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max. ) K6E0808C1E-12 : 80mA(Max. ) K6E0808C1E-15 : 80mA(Max. )
* Single 5.0V±10% Power Supply
* TTL Compatib

K6E0808C1E-I10 Applications

* The K6E0808C1E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward. PIN CONFIGURATION(Top View) OE A11 A9 A8 A13 WE Vcc A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 TSOP1 ORDE

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Datasheet Details

Part number: K6E0808C1E-I10
Manufacturer: Samsung semiconductor
File Size: 181.62 KB
Datasheet: K6E0808C1E-I10_Samsungsemiconductor.pdf
Description: 32K x 8 Bit High-Speed CMOS Static RAM

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32K Bit High-Speed CMOS Static RAM Samsung semiconductor

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