K6E0808C1E-I10 Datasheet, Ram, Samsung semiconductor

K6E0808C1E-I10 Features

• Ram
• Fast Access Time 10, 12, 15ns(Max.)
• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.)

PDF File Details

Part number:

K6E0808C1E-I10

Manufacturer:

Samsung semiconductor

File Size:

181.62kb

Download:

📄 Datasheet

Description:

32k x 8 bit high-speed cmos static ram. The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 com

K6E0808C1E-I10 Application

• Applications The K6E0808C1E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward. PIN CONFIGURATION(Top View) OE A11 A9 A8 A13 WE Vcc A14 A

TAGS

K6E0808C1E-I10

Samsung semiconductor

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