K6E0808C1E-I12 Datasheet - Samsung semiconductor

K6E0808C1E-I12 32K x 8 Bit High-Speed CMOS Static RAM

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced.

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data Sheet. 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. Draft Data Aug. 1. 1998 Nov. 2. 1998 Feb. 25. 1999 Remark Preliminary Final Final The attached data sheets are prepared and a.

K6E0808C1E-I12 Features

* Fast Access Time 10, 12, 15ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatib

K6E0808C1E-I12 Datasheet (181.62 KB)