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K6X4016T3F Datasheet - Samsung semiconductor

K6X4016T3F 256Kx16 bit Low Power and Low Voltage CMOS Static RAM

The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with.
K6X4016T3F Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revised - Added Commercial product - Deleted 44-TSOP2-400R Package Type. - Added 55ns product(@ 3.0V~3.6V) Finalized Revised - Changed ICC(Operating power supply current) from 4mA to 2mA - Changed ICC1(Average operating current) from 4mA to 3mA - Changed ICC2(Average operating current) from 40mA to 25mA - Changed ISB1(Standby Current(CMOS).

K6X4016T3F_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6X4016T3F

Manufacturer:

Samsung semiconductor

File Size:

138.28 KB

Description:

256kx16 bit low power and low voltage cmos static ram.

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K6X4016T3F K6X4016T3F 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Samsung semiconductor

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