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K6X8008C2B Datasheet - Samsung semiconductor

K6X8008C2B 1Mx8 bit Low Power and Low Voltage CMOS Static RAM

The K6X8008C2B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention curren.
K6X8008C2B Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product. Finalized - Changed ICC from 10mA to 6mA - Changed ICC1 from 10mA to 7mA - Changed ICC2 from 50mA to 35mA - Changed ISB from 3mA to 0.4mA - Changed ISB1(Commercial) from 40µA to 25µA - Changed ISB1(industrial) from 40µA to 25µA - Changed ISB1(Automotive) from 50µA to 40.

K6X8008C2B_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6X8008C2B

Manufacturer:

Samsung semiconductor

File Size:

131.20 KB

Description:

1mx8 bit low power and low voltage cmos static ram.

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K6X8008C2B K6X8008C2B 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Samsung semiconductor

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