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K7N161831B Datasheet - Samsung semiconductor

512Kx36 & 1Mx18 Pipelined NtRAM

K7N161831B Features

* VDD= 2.5 or 3.3V +/- 5% Power Supply.

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.

* Three Chip Enable for simple depth expansion with no datacontention .

* A inter

K7N161831B General Description

The K7N163631B and K7N161831B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized.

K7N161831B Datasheet (603.78 KB)

Preview of K7N161831B PDF

Datasheet Details

Part number:

K7N161831B

Manufacturer:

Samsung semiconductor

File Size:

603.78 KB

Description:

512kx36 & 1mx18 pipelined ntram.
K7N163631B K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN .

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K7N161831B 512Kx36 1Mx18 Pipelined NtRAM Samsung semiconductor

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