K7N161831B datasheet, ntram equivalent, Samsung semiconductor

K7N161831B Features and benefits

* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* Byte Writable Function.
* Enable clock and suspend operation.
* Single READ/WRITE control pin.
* Self-Timed .

K7N161831B Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

K7N161831B Description

The K7N163631B and K7N161831B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except out.

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K7N161831B Datasheet, ntram equivalent, Samsung semiconductor

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K7N161831B Features and benefits

K7N161831B Application

K7N161831B Description