K7N401801M_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K7N403601M, K7N401801M
Manufacturer:
Samsung semiconductor
File Size:
311.55 KB
Description:
(k7n401801m / k7n403601m) 128kx36 & 256kx18 pipelined ntram-tm.
Note:
This datasheet PDF includes multiple part numbers: K7N403601M, K7N401801M.
Please refer to the document for exact specifications by model.
K7N403601M, K7N401801M, (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
The K7N403601M and K7N401801M are 4,718,592 bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized
K7N403601M K7N401801M www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev.
No.
0.0 0.1 History 1.
Initial document.
1.
Changed tCD,tOE from 4.0ns to 4.2ns at -75 2.
Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA.
Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.
Final spec Release.
Remove VDDQ Supply voltage( 2.5V I/O ) Add VDDQ
K7N403601M Features
* 3.3V+0.165V/-0.165V Power Supply.
* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
* Byte Writable Function.
* Enable clock and suspend operation.
* Single READ/WRITE control pin.
* Self-Timed Write Cycle.
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