K8D6316UBM Datasheet (Samsung semiconductor) - (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

K8D6316UBM, (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16.

The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group.

This block architecture provides highly flexible erase and

www.DataSheet4U.com K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory Revision History Revision No.

History 0.0 1.0 1.1 Initial Draft Final Specification Revised - Release the stand-by current from typ.

5uA(max.

18uA) to typ.

10uA(max.

30uA).

Not support 48TSOP1 Package Not support 16M/16M BANK partition Support 48TSOP1 Package Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Draft Date January 10, 2002 May 22, 2002

K8D6316UBM Features

* Single Voltage, 2.7V to 3.6V for Read and Write operations

* Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode)

* Fast Read Access Time : 70ns

* Read While Program/Erase Operation

* Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48