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K8D1716U - 16M Dual Bank NOR Flash Memory

Datasheet Summary

Description

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16.

The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group.

Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations.
  • Organization 1,048,576 x 16 bit (Word mode).
  • Fast Read Access Time : 70ns.
  • Read While Program/Erase Operation.
  • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb.
  • Secode(Security Code) Block : Extra 64K Byte block.
  • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby M.

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Datasheet Details

Part number K8D1716U
Manufacturer Samsung
File Size 481.82 KB
Description 16M Dual Bank NOR Flash Memory
Datasheet download datasheet K8D1716U Datasheet
Additional preview pages of the K8D1716U datasheet.

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Full PDF Text Transcription

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K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.
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