K8P2815UQC - 128Mb C-die NOR FLASH
(Samsung semiconductor)
Rev. 1.0, May. 2010 K8P2815UQC
128Mb C-die NOR FLASH
60FBGA & 84FBGA, Page Mode 2.7V ~ 3.6V
http://..net/
datasheet
SAMSUNG ELECTRONI.
K8P5516UZB - 256Mb B-die NOR FLASH
(Samsung semiconductor)
Rev. 1.3, May. 2010 K8P5516UZB
256Mb B-die NOR FLASH
56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V
http://..net/
datasheet
SAMSUNG ELECTRONIC.
K8P5616UZB - 256Mb B-die Page NOR FLASH
(Samsung semiconductor)
Rev. 1.0, Jun. 2010 K8P5616UZB
256Mb B-die Page NOR FLASH
256M Bit (16M x16, 32M x8), Page Mode
http://..net/
datasheet
SAMSUNG ELECT.
K8006 - BASE UNIT
(ETC)
Total solder points: 234 Difficulty level: beginner 1o 2o 3o 4o 5þ advanced
BASE UNIT for HOME MODULAR LIGHT
Features :
SYSTEM
K8006
Create your ow.
K80E07NE - TK80E07NE
(Toshiba)
TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is des.
K80E08K3 - TK80E08K3
(Toshiba)
Target Specification
TK80E08K3
)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS
TK80E08K3
E-Bike/UPS/Inverter
Unit: mm Low drain.