K8P5516UZB Datasheet (Samsung semiconductor)

K8P5516UZB, 256Mb B-die NOR FLASH

of Hardwre Protection in Figure 8: Enhanced Block Protection/Unprotection is changed from"A outermost block on both ends of flash array locked" to "Highest or lowest block locked" DC Characteristics Table is revised.

- "Read While Program Current"(I2) and "Read While Erase Current"(I3) are deleted.

Rev.

1.3, May.

2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V http://www.DataSheet4U.net/ datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

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