Datasheet4U Logo Datasheet4U.com

K8P5516UZB Datasheet - Samsung semiconductor

K8P5516UZB 256Mb B-die NOR FLASH

of Hardwre Protection in Figure 8: Enhanced Block Protection/Unprotection is changed from"A outermost block on both ends of flash array locked" to "Highest or lowest block locked" DC Characteristics Table is revised. - "Read While Program Current"(I2) and "Read While Erase Current"(I3) are deleted. .
Rev. 1.3, May. 2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V http://www.DataSheet4U.net/ datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive prope.

K8P5516UZB Datasheet (1.66 MB)

Preview of K8P5516UZB PDF
K8P5516UZB Datasheet Preview Page 2 K8P5516UZB Datasheet Preview Page 3

Datasheet Details

Part number:

K8P5516UZB

Manufacturer:

Samsung semiconductor

File Size:

1.66 MB

Description:

256mb b-die nor flash.

📁 Related Datasheet

K8P5616UZB 256Mb B-die Page NOR FLASH (Samsung semiconductor)

K8P2716UZC 128Mb C-die Page NOR Flash (Samsung semiconductor)

K8P2815UQC 128Mb C-die NOR FLASH (Samsung semiconductor)

K8006 BASE UNIT (ETC)

K80E07NE TK80E07NE (Toshiba)

K80E08K3 TK80E08K3 (Toshiba)

K810 N-Channel Silicon Power MOS FET (NEC)

K810A Sony Ericsson (Sony)

TAGS

K8P5516UZB 256Mb B-die NOR FLASH Samsung semiconductor

K8P5516UZB Distributor