K8S6415ETB, K8S6415EBB - (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

Samsung semiconductor

Datasheet Details

Part number	K8S6415ETB, K8S6415EBB
Manufacturer	Samsung semiconductor
File Size	973.64 KB
Description	(K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory
Datasheet	K8S6415EBB_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K8S6415ETB, K8S6415EBB. Please refer to the document for exact specifications by model.

is added January 09,2006 www.DataSheet4U.com 1.1 1 Revision 1.1 January, 2006 K8S6415ET(B)B

Single Voltage, 1.7V to 1.95V for Read and Write operations.
Organization - 4,194,304 x 16 bit ( Word Mode Only).
Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15.
Read While Program/Erase Operation.
Multiple Bank Architecture - 16 Banks (4Mb Partition).
OTP Block : Extra 256Byte block.
Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : www. DataSheet4U. com 90ns (54MHz) / 80ns (66MHz) - Sy.

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Published: May 9, 2008 |