* Single Voltage, 1.7V to 1.95V for Read and Write operations
* Organization - 4,194,304 x 16 bit ( Word Mode Only)
* Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15
* Read While Program/Erase Operation
* Multiple Bank Architect
K8S6415ETB Datasheet (973.64 KB)
K8S6415ETB
Samsung semiconductor
973.64 KB
(k8s6415exb) 64m bit multi bank nor flash memory.
K8S6415ET(B)B
FLASH MEMORY
Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History
Revision No. History
0.0 1.0 I.
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