K8S6415ETB Features
* Single Voltage, 1.7V to 1.95V for Read and Write operations
* Organization - 4,194,304 x 16 bit ( Word Mode Only)
* Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15
* Read While Program/Erase Operation
* Multiple Bank Architect
K8S6415EBB_Samsungsemiconductor.pdf
Datasheet Details
K8S6415ETB, K8S6415EBB
Samsung semiconductor
973.64 KB
(k8s6415exb) 64m bit multi bank nor flash memory.
This datasheet PDF includes multiple part numbers: K8S6415ETB, K8S6415EBB.
Please refer to the document for exact specifications by model.
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K8S6415ETB Distributor
