Part number:
K8S1215EBC
Manufacturer:
Samsung
File Size:
661.31 KB
Description:
512mb c-die nor flash
K8S1215EBC Datasheet (661.31 KB)
K8S1215EBC
Samsung
661.31 KB
512mb c-die nor flash
* 5 2.0 GENERAL DESCRIPTION 5 3.0 PIN DESCRIPTION 5 4.0 64Ball FBGA TOP VIEW (BALL DOWN) 6 5.0 FUNCTIONAL BLOCK DIAGRAM 7 6.0 ORDERING INFORMATION 8 7.0 PRODUCT INTRODUCTION 11 8.0 COMMAND DEFINITIONS 12 9.0 DEVICE OPERATION 14 9.1 Read Mode 14 9.1.1 Asynchronous Read Mode 14 9.1.2 Synchronous
📁 Related Datasheet
K8S1215ETC - 512Mb C-die NOR FLASH
(Samsung)
Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC
512Mb C-die NOR FLASH
9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V
datasheet
S.
K8S1215EZC - 512Mb C-die NOR FLASH
(Samsung)
Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC
512Mb C-die NOR FLASH
9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V
datasheet
S.
K8S6415EBB - (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory
(Samsung semiconductor)
K8S6415ET(B)B
FLASH MEMORY
Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History
Revision No. History
0.0 1.0 I.
K8S6415ETB - (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory
(Samsung semiconductor)
K8S6415ET(B)B
FLASH MEMORY
Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History
Revision No. History
0.0 1.0 I.
K8006 - BASE UNIT
(ETC)
Total solder points: 234 Difficulty level: beginner 1o 2o 3o 4o 5þ advanced
BASE UNIT for HOME MODULAR LIGHT
Features :
SYSTEM
K8006
Create your ow.
K80E07NE - TK80E07NE
(Toshiba)
TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is des.