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K9K1G08U0M-YCB0 Datasheet - Samsung semiconductor

K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory

The K9K1G08U0M is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be .
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) > device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1 µs is required before internal circuit gets ready for any command sequences Draft Date Apr. 7th 2001 Jul. 3rd 2001 Remark Jul. 23th 2001 2.5V VCC High ≈ 2.5V W P W E 2. AC parameter tCLR(CLE to RE Delay, min 50ns) i.

K9K1G08U0M-YCB0 Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG El

K9K1G08U0M-YCB0 Datasheet (467.98 KB)

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Datasheet Details

Part number:

K9K1G08U0M-YCB0

Manufacturer:

Samsung semiconductor

File Size:

467.98 KB

Description:

128m x 8 bit nand flash memory.

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K9K1G08U0M-YCB0 128M Bit NAND Flash Memory Samsung semiconductor

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