K9K1G08U0M-YCB0, K9K Datasheet (Samsung semiconductor)

K9K1G08U0M-YCB0, K9K, 128M x 8 Bit NAND Flash Memory

The K9K1G08U0M is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1.

Initial issue 1.[Page 31] device code (76h) > device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1 µs is required before internal circuit gets ready for any command sequences Draft Date Apr.

7th 2001 Jul.

3rd 2001 Remark Jul.

23th 2001 2.5V VCC High ≈ 2.5V W P W E 2.

AC parameter tCLR(CLE to RE Delay, min 50ns) i

K9K1G08U0M-YCB0 Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG El