K9K1G08U0B Datasheet - Samsung semiconductor

K9K1G08U0B 128M x 8 Bit NAND Flash Memory

The K9K1G08X0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200µs on the 528-byte page and an erase operation can b.

K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Advance Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 15 ) -Error in write or read operation ( page 16 ) -Program Flow Chart ( page 16 ) 3. Vcc range is changed -1.7V~1.95V ->1.65V~1.95V 4. 2.7V device is added 5. Multi plane operation an.

K9K1G08U0B Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specif

K9K1G08U0B Datasheet (1.05 MB)

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Datasheet Details

Part number:

K9K1G08U0B

Manufacturer:

Samsung semiconductor

File Size:

1.05 MB

Description:

128m x 8 bit nand flash memory.

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K9K1G08U0B 128M Bit NAND Flash Memory Samsung semiconductor

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