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K9K1G08U0M-YCB0 - 128M x 8 Bit NAND Flash Memory

This page provides the datasheet information for the K9K1G08U0M-YCB0, a member of the K9K 128M x 8 Bit NAND Flash Memory family.

Description

The K9K1G08U0M is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached data sheets are prepared and approved by.

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Datasheet preview – K9K1G08U0M-YCB0

Datasheet Details

Part number K9K1G08U0M-YCB0
Manufacturer Samsung semiconductor
File Size 467.98 KB
Description 128M x 8 Bit NAND Flash Memory
Datasheet download datasheet K9K1G08U0M-YCB0 Datasheet
Additional preview pages of the K9K1G08U0M-YCB0 datasheet.

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Other Datasheets by Samsung semiconductor
  • K9K1G08U0M-YIB0 - 128M x 8 Bit NAND Flash Memory
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  • K9K1G08U0B - 128M x 8 Bit NAND Flash Memory
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  • K9K1G16U0A - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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Full PDF Text Transcription

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K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) --> device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1 µs is required before internal circuit gets ready for any command sequences Draft Date Apr. 7th 2001 Jul. 3rd 2001 Remark Jul. 23th 2001 2.5V VCC High ≈ 2.5V W P W E 2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added. 3. [Page28] Only address A 14 to A 25 is valid while A9 to A 13 is ignored --> Only address A 14 to A 26 is valid while A 9 to A 13 is ignored 0.3 (page 30) Sep.
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