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K9K1G08U0A1 Key Features

  • Voltage Supply
  • 1.8V device(K9K1GXXQ0A) : 1.70~1.95V
  • 3.3V device(K9K1GXXU0A) : 2.7 ~ 3.6 V
  • Organization
  • Memory Cell Array
  • X8 device(K9K1G08X0A) : (128M + 4096K)bit x 8 bit
  • X16 device(K9K1G16X0A) : (64M + 2048K)bit x 16bit
  • Data Register
  • X8 device(K9K1G08X0A) : (512 + 16)bit x 8bit
  • X16 device(K9K1G16X0A) : (256 + 8)bit x16bit

Related Samsung Semiconductor Datasheets

Part Number Description
K9K1G08U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0B 128M x 8 Bit NAND Flash Memory
K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory
K9K1G08U0M-YIB0 128M x 8 Bit NAND Flash Memory
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08U0A1 Description

History 0.0 0.1 Initial issue. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 2. 63FBGA,1.8V product is added.