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K9K1G08U0B - 128M x 8 Bit NAND Flash Memory

General Description

The K9K1G08X0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. samsung. com/Products/Semiconductor/Flash/TechnicalInfo/datasheets. htm The attached data sheets are prepared and approved by.

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Full PDF Text Transcription for K9K1G08U0B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9K1G08U0B. For precise diagrams, and layout, please refer to the original PDF.

K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Advance Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1...

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Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 15 ) -Error in write or read operation ( page 16 ) -Program Flow Chart ( page 16 ) 3. Vcc range is changed -1.7V~1.95V ->1.65V~1.95V 4. 2.7V device is added 5. Multi plane operation and Copy-Back Program are not supported with 1.8V device. Draft Date Mar. 17th 2003 Oct. 11th 2004 Remark Advance Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. htt