Download K9K1G08U0B Datasheet PDF
K9K1G08U0B datasheet preview
K9K1G08U0B page 2
Page 2
K9K1G08U0B page 3
Page 3

K9K1G08U0B Key Features

  • Voltage Supply
  • 1.8V device(K9K1G08R0B) : 1.65 ~ 1.95V
  • 2.7V device(K9K1G08B0B) : 2.5 ~ 2.9V
  • 3.3V device(K9K1GXXU0B) : 2.7 ~ 3.6 V
  • Organization
  • Memory Cell Array -128M + 4096K)bit x 8 bit
  • Data Register
  • (512 + 16)bit x 8bit
  • Automatic Program and Erase
  • Page Program

Related Samsung Semiconductor Datasheets

Part Number Description
K9K1G08U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory
K9K1G08U0M-YIB0 128M x 8 Bit NAND Flash Memory
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08U0B Description

The K9K1G08X0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200µs on the 528-byte page and an erase operation can be performed in typically 2ms on a 16K-byte block.