K9K1G08U0M-YIB0 Datasheet (128M x 8 Bit NAND Flash Memory)

Part: K9K1G08U0M-YIB0
Manufacturer: Samsung Semiconductor
Size: 467.98 KB

K9K1G08U0M-YIB0 Key Features

Voltage Supply : 2.7V~3.6V
Organization
Memory Cell Array : (128M + 4,096K)bit x 8bit
Data Register : (512 + 16)bit x8bit multipled by eight planes
Automatic Program and Erase
Page Program : (512 + 16)Byte
Block Erase : (16K + 512)Byte
528-Byte Page Read Operation
Random Access : 12µ s(Max.)
Serial Page Access : 50ns(Min.)

Related Samsung Semiconductor Datasheets

Part Number	Description
K9K1G08U0M-YCB0	128M x 8 Bit NAND Flash Memory
K9K1G08U0A	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0B	128M x 8 Bit NAND Flash Memory
K9K1G08Q0A	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08U0M-YIB0 Description

The K9K1G08U0M is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block.