K9K1G08U0M-YIB0 Overview
The K9K1G08U0M is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block.
K9K1G08U0M-YIB0 Key Features
- Voltage Supply : 2.7V~3.6V
- Organization
- Memory Cell Array : (128M + 4,096K)bit x 8bit
- Data Register : (512 + 16)bit x8bit multipled by eight planes
- Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
- 528-Byte Page Read Operation
- Random Access : 12µ s(Max.)
- Serial Page Access : 50ns(Min.)