K9K2G08U0M-VIB0
Key Features
- Fast Write Cycle Time - Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O P
- Part: K9K2G08U0M-VIB0
- Description: 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
- Manufacturer: Samsung Semiconductor
- Size: 734.52 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| K9K2G08U0M-PCB0 | Samsung Semiconductor | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-PIB0 | Samsung Semiconductor | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-V | Samsung Semiconductor | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-VCB0 | Samsung Semiconductor | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0A | Samsung Semiconductor | FLASH MEMORY |