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K9K2G08U0A

FLASH MEMORY

K9K2G08U0A Features

* Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V

* Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte

* Page Read Operation - Pag

K9K2G08U0A General Description

of Copy-back program is changed 4. TSOP package is deleted 1. CE access time : 23ns->35ns (p.9) 1. The value of tREA is changed. (18ns->20ns) 2. EDO mode is added. 1. The flow chart to creat the initial invalid block table is changed. 1. 1.8V FBGA spec is merged 2. 3.3V FBGA package is added 3. FBGA.

K9K2G08U0A Datasheet (1.02 MB)

Preview of K9K2G08U0A PDF

Datasheet Details

Part number:

K9K2G08U0A

Manufacturer:

Samsung semiconductor

File Size:

1.02 MB

Description:

Flash memory.
K9K2G08U0A K9K2G08R0A FLASH MEMORY www.DataSheet4U.com K9K2G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS .

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K9K2G08U0A FLASH MEMORY Samsung semiconductor

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