KM41V4000D Datasheet (Samsung semiconductor) - 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode

KM41V4000D, 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode

This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional

KM41V4000D Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version. This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width