M470T6554CZ0 Datasheet - Samsung semiconductor

M470T6554CZ0 DDR2 Unbuffered SODIMM

Pin Name CK0,CK1 CK0,CK1 CKE0,CKE1 RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL Function Clock Inputs, positive line Clock Inputs, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge SDRAM Bank Add.

256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 March 2005 Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 Unbuffered SODIMM Ordering Information Part Number M470T3354CZ0-C(L)D6/E6/D5/CC M470T6554CZ0-C(L)D6/E6/D5/CC M470T2953CZ0-C(L)D6/E6/D5/CC DDR2 SDRAM Number of Rank 1 2 2 Density 256MB 512MB 1GB Organization 32Mx64 64Mx64 128Mx64 Component Composition 32Mx16(K4T51163QC-C(L)D6.

M470T6554CZ0 Features

* Performance range D6(DDR2-667) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 667 667 4-4-4 E6(DDR2-667) 400 533 667 5-5-5 D5(DDR2-533) 400 533 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK

* JEDEC standard 1.8V ± 0.1V Power Supply

* VDDQ = 1.8V ± 0.1V

M470T6554CZ0_Samsungsemiconductor.pdf