* Low power consumption (4.0mA typ. at VCC = 4.0V) Excellent input sensitivity (-3dB limiting, 2.0µVrms typ.) Minimum number of external components required. Operating Voltage: 2.5 to 7.0V 16
* SOP
* 225A APPLICATIONS
* Cordless p
S1T3361D01 Datasheet (130.01 KB)
S1T3361D01
Samsung semiconductor
130.01 KB
Low voltage/power narrow band fm if.
LOW VOLTAGE/POWER NARROW BAND FM IF S1T3361D INTRODUCTION The S1T3361D is designed for use in FM dual conversion communication. It contains a comple.
📁 Related Datasheet
S1T3361D LOW VOLTAGE/POWER NARROW BAND FM IF (Samsung semiconductor)
S1T Surface Mount Glass Passivated Rectifier (MEI SEMI)
S1T Standard Recovery SMD Rectifier Diodes (Diotec)
S1T SURFACE MOUNT HIGH VOLTAGE RECTIFIER (EIC)
S1T2410B01 bipolar integrated circuit designed as a telephone bell replacement (Samsung semiconductor)
S1T2410B02 bipolar integrated circuit designed as telephone bell replacement (Samsung semiconductor)
S1T2418D02 TONE RINGER (Samsung semiconductor)
S1T2418G01 TONE RINGER (Samsung semiconductor)
S1T2425A SPEECH NETWORK WITH DIALER INTERFACE (Samsung semiconductor)
S1T8501 SPEECH NETWORK WITH DIALER INTERFACE (Samsung semiconductor)
