S1T3361D01 Datasheet, If, Samsung semiconductor

S1T3361D01 Features

  • If
  • Low power consumption (4.0mA typ. at VCC = 4.0V) Excellent input sensitivity (-3dB limiting, 2.0µVrms typ.) Minimum number of external components

PDF File Details

Part number:

S1T3361D01

Manufacturer:

Samsung semiconductor

File Size:

130.01kb

Download:

📄 Datasheet

Description:

Low voltage/power narrow band fm if.

Datasheet Preview: S1T3361D01 📥 Download PDF (130.01kb)
Page 2 of S1T3361D01 Page 3 of S1T3361D01

S1T3361D01 Application

  • Applications
  • Cordless phone (for home usage) FM dual conversion communications equipment ORDERING INFORMATION Device S1T3361D0

TAGS

S1T3361D01
LOW
VOLTAGE
POWER
NARROW
BAND
Samsung semiconductor

📁 Related Datasheet

S1T3361D - LOW VOLTAGE/POWER NARROW BAND FM IF (Samsung semiconductor)
LOW VOLTAGE/POWER NARROW BAND FM IF S1T3361D INTRODUCTION The S1T3361D is designed for use in FM dual conversion munication. It contains a ple.

S1T - Surface Mount Glass Passivated Rectifier (MEI SEMI)
SURFACE MOUNT GLASS PASSIVATED RECTIFIER S1T ~ S1Y Surface Mount Glass Passivated Rectifier Features  Plastic package has Underwriters Laboratory f.

S1T - Standard Recovery SMD Rectifier Diodes (Diotec)
S1A S1Y S1A S1Y Standard Recovery SMD Rectifier Diodes SMD-Gleichrichterdioden mit Standard-Sperrverzug IFAV = 1 A VF < 1.1 V Tjmax = 150°C .

S1T - SURFACE MOUNT HIGH VOLTAGE RECTIFIER (EIC)
.eicsemi. TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 S1T PRV : 3000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High su.

S1T2410B01 - bipolar integrated circuit designed as a telephone bell replacement (Samsung semiconductor)
TONE RINGER S1T2410B01/B02 INTRODUCTION The S1T2410B01/B02 is a bipolar integrated circuit designed as a telephone bell replacement. 8−DIP−300 FUN.

S1T2410B02 - bipolar integrated circuit designed as telephone bell replacement (Samsung semiconductor)
TONE RINGER S1T2410B01/B02 INTRODUCTION The S1T2410B01/B02 is a bipolar integrated circuit designed as a telephone bell replacement. 8−DIP−300 FUN.

S1T2418D02 - TONE RINGER (Samsung semiconductor)
TONE RINGER WITH DRIDGE DIODE INTRODUCTION The S1T2418G01/D02 is a monolithic integrated circuit telephone tone ringer with bridge diode. When couple.

S1T2418G01 - TONE RINGER (Samsung semiconductor)
TONE RINGER WITH DRIDGE DIODE S1T2418G01/D02 INTRODUCTION The S1T2418G01/D02 is a monolithic integrated circuit telephone tone ringer with bridge di.

S1T2425A - SPEECH NETWORK WITH DIALER INTERFACE (Samsung semiconductor)
SPEECH NETWORK WITH DIALER INTERFACE S1T2425A INTRODUCTION The S1T2425A is telephone speech network integrated circuit which includes transmit amp, .

S1T8501 - SPEECH NETWORK WITH DIALER INTERFACE (Samsung semiconductor)
SPEECH NETWORK WITH DIALER INTERFACE S1T8501 INTRODUCTION The S1T8501 is a speech network integrated circuit which includes the following ponents.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts