IRFSZ34A
Samsung
493.05kb
Power mosfet.
TAGS
📁 Related Datasheet
IRFSZ14A - Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFSZ24A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*D.
IRFSZ40 - N-Channel Power MOSFET
(Samsung)
.
IRFSZ44 - N-Channel Power MOSFET
(Samsung)
.
IRFSZ44A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*D.
IRFS11N50A - SMPS MOSFET
(IRF)
PD- 93797
SMPS MOSFET
IRFS11N50A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed po.
IRFS11N50A - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFS11N50A, SiHFS11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configur.
IRFS11N50A - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFS11N50A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.52Ω (MAX) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS .
IRFS140A - Advanced Power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFS150A - Advanced Power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.