K4H511638C-UC Datasheet - Samsung

K4H511638C-UC 512Mb C-die DDR SDRAM

32Mb x 16 64Mb x 8 128Mb x 4 DDR SDRAM VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD V.

DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 512Mb C-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 January. 2005 Rev. 1.0 January. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) 512Mb C-die Revision History Revision 0.0 (April, 2004) - First version for internal review Revision 0.1 (August, 2004) - Preliminary spec release. Revision 0.2 (October, 2004) - Changed IDD current. Revision 1.0 (January, 2005) - Release the Rev. 1.0 spec. DDR SDRAM Rev. 1.0 January..

K4H511638C-UC Features

* VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333

* VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)

* Four banks operation

K4H511638C-UC Datasheet (208.79 KB)