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K4H511638C-UC, K4H510438C-UC 512Mb C-die DDR SDRAM

K4H511638C-UC Description

DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 512Mb C-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 January.20.
32Mb x 16 64Mb x 8 128Mb x 4 DDR SDRAM VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1.

K4H511638C-UC Features

* VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
* VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
* Double-data-rate architecture; two data transfers per clock cycle
* Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
* Four banks operation

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4H511638C-UC, K4H510438C-UC. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4H511638C-UC, K4H510438C-UC
Manufacturer
Samsung
File Size
208.79 KB
Datasheet
K4H510438C-UC-Samsung.pdf
Description
512Mb C-die DDR SDRAM
Note
This datasheet PDF includes multiple part numbers: K4H511638C-UC, K4H510438C-UC.
Please refer to the document for exact specifications by model.

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512Mb C-die DDR SDRAM Samsung
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